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Krunter Future Tech (Dongguan) Co., Ltd.
Krunter Future Tech. (Dongguan) Co., Ltd.
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Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations

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Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations

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Brand Name : Krunter

Model Number : KES650H12A8L-2M

Moisture Sensitive : YES

Output Current : 60A

Dimensions : 25mm x 50mm x 10mm

Close : No Shutdown

Maximum Operating Temperature : 150°C

Input Range : 4.5V~5.5V

Collector-Emitter Voltage : 600V

Number Of Pins : 7

Lead Times : Immediately Shipment

Contact Resistance : 30mΩ

Thermal Resistance : 0.5°C/W

Peak Repetitive Reverse : 100-1600V

Application : Power Conversion

Qualification : Industrial

Organization : 512 M x 16

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KES650H12A8L-2M

  • High power density with Trench FS IGBT technology

  • Low VCE(sat)

  • Parallel operation enabled ; symmetrical design & positive temperature coefficient

  • Low inductance design

  • Integrated NTC temperature sensor

  • Isolated baseplate using DBC technology

  • Compact and robust design with molded terminals

Internal Circuit Diagram

Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations

Specification Parameters

TYPE VBR
Volts
VGS(th)
Volts
ID
Amps
RDS(on)
IDSS
uA
TJ Rth(JC)
K/W
Ptot
Watts
Circuit Package Technology
KES400H12A8L-2M 1200V 3.2V 400A 3.7mΩ 200uA 175℃ 0.064 2230W 2 Pack ECDUAL3 SIC MOSFET
KES650H12A8L-2M 1200V 3.2V 650A 2.2mΩ 200uA 175℃ 0.064 3200W 2 Pack SIC MOSFET


Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations


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